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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2794 DESCRIPTION *With TO-126 package *Low collector saturation voltage APPLICATIONS *For medium power linear and switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base * Absolute maximum ratings (Ta=25) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter -base voltage Collector current (DC) Collector current-Peak Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 60 60 5 2 6 25 150 -65~150 UNIT V V V A A W Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2794 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0 60 V VCEsat Collector-emitter saturation voltage IC=1A; IB=0.1A 0.6 V VBE Base-emitter on voltage IC=1A ; VCE=2V 1.3 V A ICBO Collector cut-off current VCB=60V; IE=0 100 IEBO Emitter cut-off current VEB=5V; IC=0 1 mA hFE-1 DC current gain IC=150mA ; VCE=2V 50 hFE-2 DC current gain IC=1A ; VCE=2V 25 fT Transition frequency IC=100mA; VCE=5V 40 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2794 Fig.2 Outline dimensions 3 |
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